触发器/锁存器/寄存器

[pics:title]

74AUP1G175-Q100

Low-power D-type flip-flop with reset; positive-edge trigger

应用领域

The 74AUP1G175 is a single positive edge triggered D-type flip-flop with individual data (D), clock (CP), master reset (MR) inputs, and Q output. The D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and appear at the Q output. A LOW on MR causes the flip-flop and output to be reset to LOW. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

产品详情

特性

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range from 0.8 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • ESD protection:

    • MIL-STD-883, method 3015 Class 3A. Exceeds 5000 V

    • HBM JESD22-A114F Class 3A. Exceeds 5000 V

    • MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation


参数类型

Type numberProduct statusVCC (V)Logic switching levelsOutput drive capability (mA)tpd (ns)fmax (MHz)Power dissipation considerationsTamb (°C)Rth(j-a) (K/W)Ψth(j-top) (K/W)Rth(j-c) (K/W)Package name
74AUP1G175GW-Q100Production0.8 - 3.6CMOS± 1.97.470ultra low-40~12526438.6153TSSOP6