74LVC1G80-Q100

Single D-type flip-flop; positive-edge trigger

应用领域

The 74LVC1G80-Q100 is a single positive-edge triggered D-type flip-flop. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and its complement will appear at the Q output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

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产品详情

特性

Automotive product qualification in accordance with AEC-Q100 (Grade 1)

Specified from -40 °C to +85 °C and -40 °C to +125 °C

Wide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
±24 mA output drive (VCC = 3.0 V)
CMOS low power dissipation
Direct interface with TTL levels
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 250 mA
Complies with JEDEC standard:

JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD36 (4.5 V to 5.5 V)

ESD protection:

MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)

参数类型

Type number	Product status	VCC (V)	Logic switching levels	Output drive capability (mA)	tpd (ns)	fmax (MHz)	Power dissipation considerations	Tamb (°C)	Rth(j-a) (K/W)	Ψth(j-top) (K/W) operating thermal characterization parameter measured between the junction and top center of a package of an integrated circuit component	Rth(j-c) (K/W)	Package name
74LVC1G80GV-Q100	Production	1.65 - 5.5	CMOS/LVTTL	± 32	2.4	450	low	-40~125	270	63.3	169	TSOP5
74LVC1G80GW-Q100	Production	1.65 - 5.5	CMOS/LVTTL	± 32	2.4	450	low	-40~125	311	80.9	181	TSSOP5

触发器/锁存器/寄存器

74LVC1G80-Q100

应用领域

特性

参数类型