74AUP1G132-Q100

Low-power 2-input NAND Schmitt trigger

应用领域

The 74AUP1G132-Q100 is a single 2-input NAND gate with Schmitt-trigger inputs. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

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产品详情

特性

Automotive product qualification in accordance with AEC-Q100 (Grade 1)

Specified from -40 °C to +85 °C and from -40 °C to +125 °C

Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Overvoltage tolerant inputs to 3.6 V
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standards:

JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V )

ESD protection:

HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
MIL-STD-883, method 3015 Class 3A exceeds 5000 V

目标应用

Wave and pulse shaper
Astable multivibrator
Monostable multivibrator.

参数类型

Type number	Product status	VCC (V)	Logic switching levels	Output drive capability (mA)	tpd (ns)	fmax (MHz)	Nr of bits	Power dissipation considerations	Tamb (°C)	Rth(j-a) (K/W) operating thermal resistance	Ψth(j-top) (K/W)	Rth(j-c) (K/W)	Package name
74AUP1G132GW-Q100	Production	0.8 - 3.6	CMOS	± 1.9	10	70	1	ultra low	-40~125	309	79.2	179	TSSOP5

门

74AUP1G132-Q100

应用领域

特性

目标应用

参数类型