74AUP1G332

Low-power 3-input OR-gate

应用领域

The 74AUP1G332 is a single 3-input OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

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产品详情

特性

Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Complies with JEDEC standards:

JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)

ESD protection:

HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V

Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

Type number	Product status	VCC (V)	Logic switching levels	Output drive capability (mA)	tpd (ns)	fmax (MHz)	Nr of bits	Power dissipation considerations	Tamb (°C)	Rth(j-a) (K/W)	Ψth(j-top) (K/W)	Rth(j-c) (K/W)	Package name
74AUP1G332GM	Production	0.8 - 3.6	CMOS	± 1.9	6.8	70	1	ultra low	-40~125	290	6.5	145	XSON6
74AUP1G332GN	Production	0.8 - 3.6	CMOS	± 1.9	6.8	70	1	ultra low	-40~125	275	11.7	171	XSON6
74AUP1G332GS	Production	0.8 - 3.6	CMOS	± 1.9	6.8	70	1	ultra low	-40~125	272	14.8	177	XSON6
74AUP1G332GW	Production	0.8 - 3.6	CMOS	± 1.9	6.8	70	1	ultra low	-40~125	264	38.6	153	TSSOP6

门

74AUP1G332

应用领域

特性

参数类型