74AUP1G38

Low-power 2-input NAND gate (open drain)

应用领域

The 74AUP1G38 is a single 2-input NAND gate with open-drain output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

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产品详情

特性

Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Complies with JEDEC standards:

JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)

ESD protection:

HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V

Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

Type number	Product status	VCC (V)	Logic switching levels	Output drive capability (mA)	tpd (ns)	fmax (MHz)	Nr of bits	Power dissipation considerations	Tamb (°C)	Rth(j-a) (K/W)	Ψth(j-top) (K/W)	Rth(j-c) (K/W)	Package name
74AUP1G38GM	Production	0.8 - 3.6	CMOS	1.9	8.5	70	1	ultra low	-40~125	311	7.7	157	XSON6
74AUP1G38GN	Production	0.8 - 3.6	CMOS	1.9	8.5	70	1	ultra low	-40~125	334	22.6	207	XSON6
74AUP1G38GS	Production	0.8 - 3.6	CMOS	1.9	8.5	70	1	ultra low	-40~125	321	28.7	215	XSON6
74AUP1G38GW	Production	0.8 - 3.6	CMOS	1.9	8.5	70	1	ultra low	-40~125	309	79.2	179	TSSOP5
74AUP1G38GX	Production	0.8 - 3.6	CMOS	1.9	8.5	70	1	ultra low	-40~125	322	90.7	191	X2SON5

门

74AUP1G38

应用领域

特性

参数类型