The basic pulse is programmed by selection of an external resistor (REXT) and capacitor (CEXT).
Once triggered, the basic output pulse width may be extended by retriggering the gated active LOW-going edge input (A) or the active HIGH-going edge input (B). By repeating this process, the output pulse period (Q = HIGH) can be made as long as desired. Alternatively an output delay can be terminated at any time by a LOW-going edge on input CLR, which also inhibits the triggering.
An internal connection from CLR to the input gates makes it possible to trigger the circuit by a HIGH-going signal at input CLR.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V and 5 V environment. Schmitt trigger inputs, makes the circuit highly tolerant to slower input rise and fall times.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
DC triggered from active HIGH or active LOW inputs
Retriggerable for very long pulses up to 100 % duty factor
Direct reset terminates output pulse
Schmitt trigger on all inputs
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
Power-on-reset on outputs
Latch-up performance exceeds 100 mA
Direct interface with TTL levels
Inputs accept voltages up to 5.5 V
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 Ω)
Type number | Product status | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|
74LVC1G123DC-Q100 | Production | 1.65 - 5.5 | CMOS/LVTTL | ± 32 | 3.5 | low | -40~125 | 203 | 34.0 | 113 | VSSOP8 |
74LVC1G123DP-Q100 | Production | 1.65 - 5.5 | CMOS/LVTTL | ± 32 | 3.5 | low | -40~125 | 214 | 19.8 | 105 | TSSOP8 |